セミナー：Nicolas Izard博士 (CNRS Researcher)
日時：2013年6月10日（月）　15：00～16：00
会場：東京都文京区本郷 7-3-1
 　　　　東京大学工学部 2号館 3階　電気系会議室3 (33B1室）
地図：http://www.u-tokyo.ac.jp/campusmap/cam01_04_03_j.html

Monday, June 10th, 2013
15:00 at EE Conference room 3 (Eng. bldg. 2, 3F 33B1)

Nicolas Izard (CNRS Researcher)
Institute for Fundamental Electronics (IEF) Univ. Paris-Sud, Orsay, France

Single-wall carbon nanotubes have the ability to emit, modulate and detect light in the wavelength range of silicon transparency, which make them a promising candidate for active device in silicon photonics technology. Few years ago, we have developed an efficient method to extract semiconducting nanotube (s-SWNT) which are metallic free [1]. 
This achievement leads to the first experimental demonstration of a strong optical gain of 160 cm-1 at a wavelength of 1.3 μm in (8,7) s-SWNT at room temperature [2]. Carbon nanotube properties were then relied on the existing silicon photonic platform, and we envision the use of carbon nanotubes as active optoelectronic devices in silicon. A complete study of the coupling between s-SWNT and silicon waveguides was performed [3]. In particular, temperature independent emission up to 100°C from carbon nanotubes in silicon waveguide was demonstrated, which opens bright perspectives for future high performance integrated circuits.

[1] Opt. Lett., 34, 3845 (2009)
[2] Appl. Phys. Lett., 96, 231105 (2010) [3] ACS Nano, 6, 3813-3819 (2012)